High-Resolution 3D Confocal Raman Imaging for Group III Nitrides

High-Resolution 3D Confocal Raman Imaging for Group III Nitrides

Structured substrates are widely employed in semiconductor research and development, and detailed knowledge of the inherent strain and crystalline properties of these structures point towards their quality and reliability.

Analysis using X-ray diffraction is a technique commonly used to probe film thickness, lattice constants and strain states of layered structures. While scanning electron microscopy (SEM) is often used to inspect surfaces for defects and to understand the growth history.

This application note shows how 3D confocal Raman imaging can reveal changes in the lattice structure attributed to strain.