Stress in Si: Combining Confocal Raman and Atomic Force Microscopy

Stress in Si: Combining Confocal Raman and Atomic Force Microscopy

In this study, the stress field around a Vickers indent was analysed using Raman imaging and AFM. The WITec instrument used, being confocal, captured both the topography (10 x 10 µm, 5 nm vertical scale) around the Vickers indent, and a stress image of the same area via its Raman Imaging Mode (10 x 10 µm scale). A complete Raman spectrum was acquired at every pixel.