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Stress in Si: Combining Confocal Raman and Atomic Force Microscopy

Stress in Si: Combining Confocal Raman and Atomic Force Microscopy
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Stress in Si: Combining Confocal Raman and Atomic Force Microscopy
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Analysing the stress field around a Vickers indent using Raman imaging and AFM   

Stress in Si: Combining Confocal Raman and Atomic Force Microscopy   

Stress in Si: Combining Confocal Raman and Atomic Force Microscopy

In this study, the stress field around a Vickers indent was analysed using Raman imaging and AFM. The WITec instrument used, being confocal, captured both the topography (10 x 10 µm, 5 nm vertical scale) around the Vickers indent, and a stress image of the same area via its Raman Imaging Mode (10 x 10 µm scale). A complete Raman spectrum was acquired at every pixel.